MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz

MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz

MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz

MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz,RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz MRF6VP2600H, • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg, f = 225 MHz, Channel Bandwidth = 7,61 MHz, Input Signal PAR = 9,3 dB @ 0,01% Probability on CCDF,: MRF6VP2600HR6 MRF6VP2600H, RF Power LDMOS Transistors High Ruggedness, Online Exclusive Design and fashion enthusiasm Do our best to make your shopping happy. 500 MHz MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to.

MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz

MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz. : MRF6VP2600HR6 MRF6VP2600H. RF Power LDMOS Transistors High Ruggedness. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.. Condition:: New: A brand-new, unused, unopened and undamaged item in original retail packaging (where packaging is applicable). If the item comes direct from a manufacturer, it may be delivered in non-retail packaging, such as a plain or unprinted box or plastic bag. See the seller's listing for full details. See all condition definitions : Model: : MRF6VP2600H , Brand: : Freescale: MPN: : MRF6VP2600H , UPC: : DOES NOT APPLY , 。

MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V  2 to 500 MHz

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MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz

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MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz

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MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz


• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg, f = 225 MHz, Channel Bandwidth = 7,61 MHz, Input Signal PAR = 9,3 dB @ 0,01% Probability on CCDF,: MRF6VP2600HR6 MRF6VP2600H, RF Power LDMOS Transistors High Ruggedness, Online Exclusive Design and fashion enthusiasm Do our best to make your shopping happy.
MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz